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| STPSC406 600 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. TO-220AC STPSC406D K A NC DPAK STPSC406B Table 1. Device summary IF(AV) VRRM Tj (max) QC (typ) 4A 600 V 175 C 3 nC September 2009 Doc ID 16283 Rev 1 1/8 www.st.com 8 Characteristics STPSC406 1 Characteristics Table 2. Symbol VRRM IF(RMS) IF(AV) Absolute ratings (limiting values at 25 C unless otherwise specified) Parameter Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current DPAK, Tc = 110 C, = 0.5 TO-220AC, Tc = 95 C, = 0.5 tp = 10 ms sinusoidal, Tc = 25 C tp = 10 ms sinusoidal, Tc = 125 C tp = 10 s square, Tc = 25 C Value 600 11 4 14 10 40 14 -55 to +175 -40 to +175 Unit V A A IFSM A IFRM Tstg Tj 1. Repetitive peak forward DPAK, Tc = 115 C, Tj = 150 C, = 0.1 current TO-220AC, Tc = 105 C, Tj = 150 C, = 0.1 Storage temperature range Operating junction temperature(1) A C C 1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Symbol Rth(j-c) Thermal resistance Parameter T0-220AC Junction to case DPAK 4.5 Value 5.5 C/W Unit Table 4. Symbol IR (1) VF (2) Static electrical characteristics Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VR = VRRM Min. IF = 4 A Typ. 10 60 1.55 1.9 Max. 50 A 500 1.9 V 2.4 Unit 1. tp = 10 ms, < 2% 2. tp = 500 s, < 2% To evaluate the conduction losses use the following equation: P = 1.20x IF(AV) + 0.3 x IF2(RMS) Table 5. Symbol Qc C Other parameters Parameter Total capacitive charge Test conditions Vr = 400 V, IF = 4 A dIF/dt = -200 A/s Tj = 150 C Vr = 0 V, Tc = 25 C, F = 1 Mhz Vr = 400 V, Tc = 25 C, F = 1 Mhz Typ. 3 200 pF 20 Unit nC Total capacitance 2/8 Doc ID 16283 Rev 1 STPSC406 Characteristics Figure 1. Forward voltage drop versus forward current (typical values) Figure 2. Reverse leakage current versus reverse voltage applied (maximum values) 8 7 IFM(A) IR(A) 1.E+04 Tj=175 C 1.E+03 6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Tj=25 C Tj=150 C Tj=175 C 1.E+02 Tj=150 C 1.E+01 1.E+00 Tj=25 C VFM(V) 1.E-01 VR(V) 1.E-02 0 50 100 150 200 250 300 350 400 450 500 550 600 Figure 3. 35 30 Peak forward current versus case temperature (TO-220AC) T Figure 4. IM(A) =0.1 Peak forward current versus case temperature (DPAK) T IM(A) 35 30 =0.1 =tp/T 25 20 =0.3 tp =tp/T 25 20 15 10 =0.3 =0.5 tp 15 10 5 0 0 =0.5 =1 d=1 =0.7 d=0.7 5 =1 d=1 =0.7 d=0.7 TC(C) 0 TC(C) 100 125 150 175 0 25 50 75 100 125 150 175 25 50 75 Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC) C(pF) 150 F=1 MHz VOSC=30 mVRMS Tj=25 C 1.0 0.9 0.8 0.7 0.6 Zth(j-c)/Rth(j-c) 125 100 75 0.5 0.4 50 0.3 0.2 25 VR(V) 0 1 10 100 1000 0.1 0.0 Single pulse tp(s) 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Doc ID 16283 Rev 1 3/8 Characteristics STPSC406 Figure 7. Relative variation of thermal impedance junction to case versus pulse duration (DPAK) Figure 8. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) Zth(j c)/Rth(j c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Single pulse 1.E+03 IFSM(A) 1.E+02 T =25 C c 1.E+01 T =125 C c tp(s) 1.E+00 1.E-05 1.E-04 1.E-03 tp(s) 1.E-02 1.E-01 1.E+00 Figure 9. Total capacitive charges versus dIF/dt (typical values) QC(nC) 7 6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/s) IF=4 A VR=400 V Tj=150 C 4/8 Doc ID 16283 Rev 1 STPSC406 Package information 2 Package information Epoxy meets UL94, V0 Cooling method: convection (C) Recommended torque: 0.4 to 0.6 N*m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 6. TO-220AC dimensions Dimensions Ref. Millimeters Min. A H2 OI L5 L7 C A Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.194 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.202 0.409 Max. 4.60 1.32 2.72 0.70 0.88 1.70 5.15 10.40 4.40 1.23 2.40 0.49 0.61 1.14 4.95 10.00 C D E F L6 L2 F1 G F1 L9 L4 F D H2 L2 L4 L5 16.40 typ. 13.00 2.65 15.25 6.20 3.50 14.00 2.95 15.75 6.60 3.93 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154 M E G L6 L7 L9 M Diam. I 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 Doc ID 16283 Rev 1 5/8 Package information Table 7. DPAK dimensions Dimensions Ref. Millimeters Min. A E B2 L2 C2 A STPSC406 Inches Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 Max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 A1 A2 B B2 D H L4 B G A1 R C C2 R C D E A2 0.60 MIN. G H V2 L2 L4 V2 0.80 typ. 0.60 0 1.00 8 0.031 typ. 0.023 0 0.039 8 Figure 10. Footprint (dimensions in mm) 6.7 3 3 1.6 2.3 6.7 2.3 1.6 6/8 Doc ID 16283 Rev 1 STPSC406 Ordering information 3 Ordering information Table 8. Ordering information Marking STPSC406D STPSC406B Package TO-220AC DPAK Weight 1.86 g 0.3g Base qty 50 2500 Delivery mode Tube Tape and reel Order code STPSC406D STPSC406B-TR 4 Revision history Table 9. Date 24-Sep-2009 Document revision history Revision 1 First issue. Changes Doc ID 16283 Rev 1 7/8 STPSC406 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 Doc ID 16283 Rev 1 |
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